Including Q-switched nanosecond pulsed laser based on single oscillator scheme and picosecond and nanosecond laser based on traveling wave amplification scheme, which can realize infrared, green to ultraviolet laser output, suitable for glass, plastic, silicon wafer, PCB, ceramic marking, cutting and deep engraving applications of other materials.
5W/10W/15W/30W
Optical characteristics
| N | Characteristics | Parameter value | Unit |
| 1 | Center wavelength | 355 | nm |
| 2 | Maximum pulse energy | >160(@50kHz) | μJ |
| 3 | Output Power | >10(@50kHz) | W |
| 4 | Frequency adjustment range | 50-200 | kHz |
| 5 | Pulse Width | (13±2ns@50kHz) | ns |
| 6 | Output power stability | <3% | RMS |
| 7 | Pulse stability | <3% | RMS |
| 8 | Beam quality M² | <1.3 | / |
| 9 | Beam pattern | TEM00 | / |
| 10 | Spot roundness | >90 | % |
| 11 | Polarization direction | Level | / |
| 12 | Collimated Beam Diameter(10X) | 5±0.5 | mm |
| 13 | Divergence angle | <2 | mrad |
| 14 | Pointing stability (8h) | <25 | urad/℃ |
| 15 | Boot warm-up time | ＞15 | min |
Electrical characteristics
| N | Characteristics | Parameter value | Unit |
| 16 | Supply voltage | 24 | V |
| 17 | Working current | <10 | A |
| 18 | Power consumption | <240 | W |
| 19 | Recommended power supply | ≥350 | W |
Environmental requirements
| N | Characteristics | Parameter value | Unit |
| 20 | Ambient temperature | 15-35 | ℃ |
| 21 | Storage temperature | -10-50 | ℃ |
| 22 | Ambient relative humidity | < 90 (no condensation) | % |
Water cooler requirements
| N | Characteristics | Parameter value | Unit |
| 23 | Cooling capacity | ＞580 | W |
| 24 | Water flow | ＞6 | L/min |
| 25 | Water tank temperature control | 25±0.1 | ℃ |
Structural characteristics
| N | Characteristics | Parameter value | Unit |
| 26 | Laser dimension (without feet and galvanometer adapters) | 440*160*130 | mm³ |
| 27 | Net weight | <12 | kg |
